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Electronic structures and their Landau quantizations in twisted graphenebilayer and trilayer are investigated using scanning tunnelling microscopy andspectroscopy. In the twisted trilayer, the top graphene layer and second layerare AB (Bernal) stacking and there is a stacking misorientation between thesecond layer and third layer. Both the twisted bilayer and trilayer exhibit twopronounced low-energy van Hove singularities (VHSs) in their spectra. Below theVHSs, the observed Landau level quantization in the twisted bilayer isidentical to that of massless Dirac fermion in graphene monolayer. Our resultdemonstrates that both the VHSs and Fermi velocity of the twisted bilayerdepends remarkably on the twist angle and the interlayer coupling strength. Inthe twisted trilayer, we directly observe Landau quantization of massive Diracfermion with a sizable band gap 105 meV, which results in valley (layer)polarization of the lowest Landau levels. Such a result is similar to theexpected Landau quantization in Bernal graphene bilayer with a moderateelectric field.

Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer