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Here, we report an alternative route to achieve two dimensional electron gas(2DEG) in a semiconductor structure. It has been shown that charge accumulationon the side facets can lead to the formation of 2DEG in a network of c-axisoriented wedge-shaped GaN nanowalls grown on c-plane sapphire substrate. Ourstudy reveals that negative charges on the side-facets pushes the electroncloud inward resulting in the formation of 2DEG in the central plane parallelto the wall height. This confinement is evidenced from several orders ofmagnitude enhancement of electron mobility as compared to bulk, observation ofweak localization effect in low temperature magneto-transport studies as wellas the reduction of both the elastic and inelastic scattering rates with theaverage width of the walls. Importantly, the phase coherence length has beenfound to be as high as 20 {\mu}m, which makes the system potentiallyinteresting for spin-tronics. Schrodinger and the Poisson equations are solvedself-consistently taking into account the surface charge accumulation effect.The result indeed shows the 2D quantum confinement of electrons even for 40 nmof wall-width.

Two dimensional confinement of electrons in nanowall network of GaN leading to high mobility and phase coherence