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Electron beam induced current (EBIC) is a powerful characterization techniquewhich offers the high spatial resolution needed to study polycrystalline solarcells. Ideally, an EBIC measurement reflects the spatially resolved quantumefficiency of the device. In this work, a model for EBIC measurements ispresented which applies when recombination within the depletion region issubstantial. This model is motivated by cross-sectional EBIC experiments onCdS-CdTe photovoltaic cells which show that the maximum efficiency of carriercollection is less than 100 \% and varies throughout the depletion region. Themodel can reproduce experimental results only if the mobility-lifetime product$\mu\tau$ is spatially varying within the depletion region. The reducedcollection efficiency is speculated to be related to high-injection effects,and the resulting increased radiative recombination.

Electron beam induced current in photovoltaics with high recombination