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Hole subband structure under strong band bending such a Pb on Si(111) andIndium on Si(111) have been investigated by angle-resolved photoelectronspectroscopy(ARPES). Energy levels of hole subband structure which indicate thequantized levels in inversion layer are strongly depend on band bend shapewhich can be controlled by the impurity concentration of substrate. Meanwhile,the discrepancy for the suband energy separation between experimental resultsand calculation results is also observed. In this study, we aim to clarify therelationship between flash annealing and impurity concentration and the holesubband. From this results, it was found out that high temperature flashannealing at 1250 degree has considerable effect on the impurity concentrationat subsurface region by Secondary Ion Mass spectroscopy (SIMS) and ourdiffusion model. This effect makes the band bend shape and subband energyseparation change. Moreover, It was revealed that the reduction of the impuritydistribution was inhibited less than 900 degree of the flashing temperature.

Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer