English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The k.p perturbation method for determination of electronic structure firstpioneered by Kohn and Luttinger continues to provide valuable insight toseveral band structure features. This method has been adopted toheterostructures confined up to three directions. In this paper, numericaldetails of setting up a k.p Hamiltonian using the finite differenceapproximation for such confined nanostructures is explicitly demonstrated.Nanostructures belonging to two symmetry classes namely cubic zincblende andrhombohedral crystals are considered. Rhombohedral crystals, of late, havegained prominence as candidates for the recently discovered topologicalinsulator (TI) class of materials. Lastly the incorporation of strain field tothe k.p Hamiltonian and matrix equations for computing the intrinsic andexternally applied strain in heterostructures within a continuum approximationis shown. Two applications are considered 1)Computation of the eigen states ofa multi-million zincblende InAs quantum dot with a stress-reducing InGaAs layerof varying Indium composition embedded in a GaAs matrix and 2)Dispersion of arhombohedral topological insulator Bi$_{2}$Se$_{3}$ film.

Numerical guidelines for setting up a general purpose k.p simulator with applications to quantum dot heterostructures and topological insulators