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Silicon is an excellent material for microelectronics and integratedphotonics with untapped potential for mid-IR optics. Despite broad recognitionof the importance of the third dimension, current lithography methods do notallow fabrication of photonic devices and functional microelements directlyinside silicon chips. Even relatively simple curved geometries cannot berealized with techniques like reactive ion etching. Embedded optical elements,like in glass, electronic devices and better electronic-photonic integrationare lacking. Here, we demonstrate laser-based fabrication of complex 3Dstructures deep inside silicon using 1 micrometer-sized dots and rod-likestructures of adjustable length as basic building blocks. The laser-modified Sihas a different optical index than unmodified parts, which enables numerousphotonic devices. Optionally, these parts are chemically etched to producedesired 3D shapes. We exemplify a plethora of subsurface, i.e., "in-chip"microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaicapplications and photonic devices that match or surpass the correspondingstate-of-the-art device performances.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon