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We employed graphene as a patternable template to protect the intrinsicsurface states of thin films of topological insulators (TIs) from environment.Here we find that the graphene provides high-quality interface so that theShubnikov de Haas (SdH) oscillation associated with a topological surface statecould be observed at the interface of a metallic Bi2Se3 film with a carrierdensity higher than ~10^19 cm-3. Our in situ X-ray diffraction study shows thatthe Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion fromthe bottom layer without any structural distortion by interfacial strain. Themagnetotransport measurements including SdH oscillations stemming from multipleconductance channels reveal that the topological surface state, with themobility as high as ~0.5 m^2/Vs, remains intact from the graphene underneathwithout degradation. Given that the graphene was prepatterned on arbitraryinsulating substrates, the TI-based microelectronic design could be exploited.Our study thus provides a step forward to observe the topological surfacestates at the interface without degradation by tuning the interface between TIand graphene into a measurable current for device application.

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene