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Generating an exponential decay function with a time constant on the order ofhundreds of milliseconds is a mainstay for neuromorphic circuits. Usually,either subthreshold circuits or RC-decays based on transconductance amplifiersare used. In the latter case, transconductances in the 10 pS range are needed.However, state-of-the-art low-transconductance amplifiers still require toomuch circuit area to be applicable in neuromorphic circuits where >100 of thesetime constant circuits may be required on a single chip. We present a siliconverified operational transconductance amplifier that achieves a gm of 5 pS inonly 700 {\mu}m2, a factor of 10-100 less area than current examples. Thisallows a high-density integration of time constant circuits in targetappliations such as synaptic learning or as driving circuit for neuromorphicmemristor arrays.

OTA based 200 G{\Omega} resistance on 700 {\mu}m2 in 180 nm CMOS for neuromorphic applications