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We show that the interplay between chiral tunneling and spin-momentum lockingof helical surface states leads to spin amplification and filtering in a 3DTopological Insulator (TI). Chiral tunneling across a TI pn junction allowsnormally incident electrons to transmit, while the rest are reflected withtheir spins flipped due to spin-momentum locking. The net result is that thespin current is enhanced while the dissipative charge current is simultaneouslysuppressed, leading to an extremely large, gate tunable spin to charge currentratio (~20) at the reflected end. At the transmitted end, the ratio stays closeto one and the electrons are completely spin polarized.

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking