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In the present work, we have investigated ballistic quantum transport invertical halo implanted p plus minus GaSb InAs n TFETs. We have investigatedthe current voltage characteristics, ON current, OFF current leakage,subthreshold swing variation as function of gate length, drain length, gateundercut, equivalent oxide thickness, High K and drain thickness. Theelectrostatic control, I V performances and optimization of device structureare carried out for novel L shaped nonlinear geometry n TFETs. In the n TFETsdevice p plus minus GaSb InAs heterostructure gives rise to type III broken gapband alignment. In this geometry the gate electric field and tunnel junctioninternal field are oriented in same direction and assist the Band to Bandtunnelling process. To study the ballistic quantum transport in this L shapednonlinear geometry we used 3 D, full-band atomistic sp3d5s spin orbital coupledtight binding method based quantum mechanical simulator which works on thebasis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr"odinger equation self consistently for potentials and Local Density of state.

Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs