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Spin-orbit coupling is ubiquitous in quantum dot quantum computingarchitectures, and makes spin qubits susceptible to charge noise. We derive aHamiltonian describing the effect of spin-orbit and noise on a single-spinqubit in a quantum dot. Relaxation is due to noise coupling different orbitallevels and is dominated by screened whole charge defects near the dot.Dephasing stems from noise causing relative fluctuations between orbitallevels, and is driven by screened whole charge defects and unscreened dipoledefects in the substrate. Dephasing times are vastly different between commonmaterials such as Si and GaAs. They can be enhanced by increasing gate fields,choosing materials with weak spin-orbit such as Si, making dots narrower, orusing accumulation dots.

Charge noise, spin-orbit coupling, and coherence of single-spin qubits