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Electron injection from the tip of a scanning tunneling microscope into ap-type GaAs(110) surface have been used to induce luminescence in the bulk.Atomically-resolved photon maps revealed significant reduction of luminescenceintensity at surface states localized near Ga atoms. Quantitative analysisbased on the first principles calculation and a rate equation approach wasperformed to describe overall energy dissipation processes of the incidenttunneling electrons. Our study shows that the recombination processes in thebulk electronic states are suppressed by the fast electron scattering at thesurface, and the electrons dominantly undergo non-radiative recombinationthrough the surface states.

Energy dissipation of electrons at a p-type GaAs(110) surface