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We demonstrate ultrafast resonance switching of terahertz metamaterialsthrough optical excitation of radiation damaged silicon placed in the gap ofsingle split gap ring resonator. We observe the dynamic switching OFF of thefundamental resonance mode on a time scale of 4 picoseconds (ps) followed bythe switching ON of the same resonance after 20 ps. Electric fielddistributions in the metamaterials unit cell derived through numericalsimulations clearly support our experimental observations, showing that thehigh electric field at the resonator gaps, responsible for inductive-capacitiveresonance (LC), completely disappears and switches OFF the resonance afterbeing optically excited. The ultrafast switching of the metamaterial resonanceis attributed to the generation of free carriers in ion-implanted silicon andtheir recombination at an ultra-short time scale. Such silicon based activecontrol of metamaterials can lead to the ultrafast terahertz metadevices.

Ultrafast Switching in Terahertz Metamaterials using Ion Implanted Silicon on Sapphire