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Rotating the magnetization of a magnetostrictive nanomagnet with electricallygenerated mechanical strain dissipates miniscule amount of energy compared toany other rotation method and would have been the ideal method to write bits innonvolatile magnetic memory, except strain cannot ordinarily rotate themagnetization of magnet by more than 90 degrees and "flip" it. Here, wedescribe a scheme to achieve complete 180 degree rotation of the magnetizationof a nanomagnet with strain that will enable writing of binary bits innon-volatile magnetic memory implemented with magneto-tunneling junctions whosesoft layers are two-phase magnetostrictive/piezoelectric multiferroics. At roomtemperature, this writing method results in: (1) energy dissipation < 6200 kTper bit, (2) write error probability < 10^-6, (3) write time of ~ 1 ns, and (4)low read error. This could potentially lead to a new genre of non-volatilememory that is extremely reliable, fast and, at the same time,ultra-energy-efficient.

Highly reliable low-energy writing of bits in non-volatile multiferroic  memory based on 180-degree magnetization switching with voltage-generated  stress