English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Mott insulator to metal transitions under electric field are currently thesubject of numerous fundamental and applied studies. This puzzling effect,which involves non-trivial out-of-equilibrium effects in correlated systems, isindeed at play in the operation of a new class of electronic memories, the Mottmemories. However the combined electronic and thermal effects are difficult todisentangle in Mott insulators undergoing such transitions. We report here acomparison between the properties under electric field of a canonical Mottinsulator and a model built on a realistic 2D resistor network able to captureboth thermal effects and electronic transitions. This comparison madespecifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge;M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistivetransition experimentally observed under electric field arises from a purelyelectronic mechanism.

Non thermal and purely electronic resistive transition in narrow gap Mott insulators