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Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D)semiconductors, has recently been regarded as a promising material to breakthrough the limit of present semiconductors including graphene. However, itspotential in carrier mobility has still been depreciated since the field-effectmobilities have only been measured from metal-insulator-semiconductor fieldeffect transistors (MISFETs), where the transport behavior of conductingcarriers located at the insulator/MoS2 interface is unavoidably interfered bythe interface traps and gate voltage. Here, we for the first time reportMoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOxSchottky electrode, where the maximum mobilities or carrier transport behaviorof the Schottky devices may hardly be interfered by on-state gate field. OurMESFETs with single-, double-, and triple-layered MoS2 respectively demonstratehigh mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low thresholdvoltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETswas theoretically explained with electron scattering reduction mechanisms.

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate