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In this paper, we report a novel chemical doping technique to reduce thecontact resistance (Rc) of transition metal dichalcogenides (TMDs) -eliminating two major roadblocks (namely, doping and high Rc) towardsdemonstration of high-performance TMDs field-effect transistors (FETs). Byusing 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an activen-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled usto reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10xlower than the control sample without doping. The corresponding specificcontact resistivity (pc) is found to decrease by two orders of magnitude. Withsuch low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a draincurrent (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best valuereported so far on MoS2 FETs.

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride  Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain  Current (460 uA/um)