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Black phosphorous (BP) is is recently unveiled as a promising two-dimensionaldirect bandgap semiconducting material. Here, we report the ambipolar fieldeffect transistor behavior of multilayers of BP with ferromagnetic tunnelcontacts. We observe a reduced of Schottky barrier < 50 meV by usingTiO${_2}$/Co contacts, which could be further tuned by gate voltages. Eminentlya good transistor performance is achieved in BP devices, with drain currentmodulation on the order of four to six orders of magnitude. The charge carriermobility is found to be $\sim$ 155 and 0.18 cm${^2}$ V${^{-1}}$ s${^{-1}}$ forholes and electrons respectively at room temperature. Furthermore,magnetoresistance calculations reveal that the resistances of the BP devicewith applied gate voltages are in the appropriate range for injection anddetection of spin polarized holes. Our results demonstrate the prospect ofengineering BP nanolayered devices for efficient nanoelectronic and spintronicapplications.

Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications