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Valence band onset (Ev), valence band tail (VBT) and valence plasmons (VPs)have been studied as a function of sputtering of SnO2 and In2-xSnxO3 (ITO) thinfilms, using ultraviolet photoemission spectroscopy (UPS). Decrease in Ev withrespect to the Fermi level and increase in the density of energy levels of VBThave been observed after 5 minutes of sputtering using Ar+ ions (500V). Bulkand surface components of VPs of Sn, SnO and SnO2 in sputtered SnO2 thin filmshave been observed in UPS spectra. Similarly, bulk and surface components ofVPs of In, Sn and oxygen deficient ITO in sputtered ITO thin films have beenobserved in UPS spectra. Possible roles of Ev and increase in the density ofenergy levels of VBT are discussed in the mechanisms of current transportthrough heterojunctions of SnO2 with semiconductors.

Valence Band Onset and Valence Plasmons of SnO2 and In2-xSnx O3 Thin Films