English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The evolution of transverse-momentum-dependent effective band offset($V_{\mathrm{eff}}$) profile for heavy (\emph{hh})- and light-holes(\emph{lh}), is detailed studied. Several new features in the metamorphosis ofthe standardized fixed-height $V_{\mathrm{eff}}$ profile for holes, in thepresence of gradually increasing valence-band mixing and pseudomorphic strain,are presented. In some $III-V$ unstrained semiconducting layeredheterostructures a fixed-height potential, is not longer valid for \emph{lh}.Indeed, we found ---as predicted for electrons---, permutations of the$V_{\mathrm{eff}}$ character for \emph{lh}, that resemble a "\emph{keyboard}",together with bandgap changes, whenever the valence-band mixing varies from lowto large intensity. Strain is able to diminish the \emph{keyboard} effect on$V_{\mathrm{eff}}$, and also makes it emerge or vanish occasionally. We foundthat multiband-mixing effects and stress induced events, are competitorsmechanisms that can not be universally neglected by assuming a fixed-heightrectangular spatial distribution for fixed-character potential energy, as areliable test-run input for heterostructures. Prior to the present report,neither direct transport-domain measurements, nor theoretical calculationsaddressed to these $V_{\mathrm{eff}}$ evolutions and permutations, has beenreported for holes, as far as we know. Our results may be of relevance forpromising heterostructure's design guided by valence-band structure modeling toenhance the hole mobility in $III-V$ materials.

Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects