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Chemical Vapor Deposition (CVD) of graphene on copper is one of the mostefficient technologies for producing high quality graphene for large areas.Nevertheless, still high pressures and big quantities of precursor gas arecurrently required. The objective of this work is to deposit graphene using themonolayer-formation-time concept (t) from the kinetic theory of gases, whichleads to an economization of the precursor gas, a minimization of the processpressure and the time needed to grow a graphene monolayer. Our process has beendesigned taking into account the dependence of t on the pressure, the massparticle of the gas, the sticking coefficient, and the growth temperature.Thus, with this alternative method, based on CVD but using very-low pressureinstant pulses of precursor gas (~10^-4 Pa), we have reduced the depositiontime to the order of 10 s. We carried out the processes at temperatures below1000 Grad Celsius with methane (CH4) as a precursor gas under High Vacuum (HV)conditions. After Raman spectroscopy and mapping, and Scanning ElectronMicroscopy (SEM) characterization of the samples, the results point to theformation of high quality monolayer graphene on sputtered copper and siliconsubstrates covering domain areas of 10^4 micron^2.

Investigation of monolayer-formation time for the synthesis of graphene on copper/nickel/silicon using very-low pressure pulses of methane