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We investigate the effect of 2-dimensional (in-plane) strain on the criticaltransition temperature TH from the photoexcited hidden state in 1T-TaS$_2$ thinfilms on different substrates. We also measure the effect of in-plane strain onthe transition temperature $T_{c2}$ between the nearly commensuratecharge-density wave state and the commensurate state near 200 K. In each case,the strain is caused by the differential contraction of the sample and thesubstrate, and ranges from 0.5 % compressive strain (CaF$_2$) to 2 % tensilestrain (sapphire). Strain appears to have an opposite effect on the H state andthe NC-C state transitions. TH shows a large and negative strain coefficient ofdT$_H$/de = - 8900+/-500 K, while $T_{c2}$ is not strongly affected by tensilestrain and shows a positive coefficient for compressive strain, which isopposite to the effect observed for hydrostatic pressure.

The effect of strain on the thawing of the hidden state and other transitions in 1T-TaS2