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In this paper, we demonstrate by simulation the general usability of anelectrostatically doped and electrically reconfigurable planar field-effecttransistor (FET) structure. The device concept is partly based on our alreadypublished and fabricated silicon nanowire 3D-FET technology. The technologicalkey features of this general purpose FET contain Schottky S/D junctions on asilicon-on-insulator (SOI) substrate additionally enabling high-temperatureoperation of the proposed device. The transistors charge carrier type, i.e. n-or ptype FET, is electrically switchable on the fly by applying a control-gatevoltage, which significantly increases the flexibility and versatility indigital integrated circuits.

Dual Metal-Gate Planar Field-Effect Transistor for Electrostatically Doped CMOS Design