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The interface between hexagonal ZnO films and cubic MgO (001) substrates,fabricated through molecular beam epitaxy, are thoroughly investigated. X-raydiffraction and (scanning) transmission electron microscopy reveal that, at thesubstrate temperature above 200 degree C, the growth follows the single [0001]direction; while at the substrate below 150 degree C, the growth is initiallyalong [0001] and then mainly changes to [0-332] variants beyond the thicknessof about 10 nm. Interestingly, a double-domain feature with a rotational angleof 30 degree appears for the growth along [0001] regardless of the growthtemperature, experimentally demonstrated the theoretical predictions foroccurrence of double rotational domains in such a heteroepitaxy [Grundmann etal, Phys. Rev. Lett. 105, 146102 (2010)]. It is also found that, the opticaltransmissivity of the ZnO film is greatly influenced by the mutation of growthdirections, stimulated by the bond-length modulations, as further determined byX-ray absorption Spectra (XAS) at Zn K edge. The XAS results also show theevolution of 4pxy and 4pz states in the conduction band as the growthtemperature increases. The results obtained from this work can hopefullypromote the applications of ZnO in advanced optoelectronics for which itsintegration with other materials of different phases is desirable.

Evolution Process of Wurtzite ZnO Films on Cubic MgO (001) Substrates: a Structural, Optical and Electronic Investigation of the Misfit Structures