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We investigate the switching kinetics of oxygen vacancies (Ov) diffusion inLPCMO-Ag memristive interfaces by performing experiments on the temperaturedependence of the high resistance (HR) state under thermal cycling.Experimental results are well reproduced by numerical simulations based onthermally activated Ov diffusion processes and fundamental assumptions relyingon a recent model proposed to explain bipolar resistive switching in manganite-based cells. The confident values obtained for activation energies anddiffusion coefficient associated to Ov dynamics, constitute a validation testfor both model predictions and Ov diffusion mechanisms in memristiveinterfaces.

Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion