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Using metamaterial absorbers, we have shown that metallic layers in theabsorbers do not necessarily constitute undesired resistive heating problem forphotovoltaics. Tailoring the geometric skin depth of metals and employing thenatural bulk absorbance characteristics of the semiconductors in thoseabsorbers can enable the exchange of undesired resistive losses with the usefuloptical absorbance in the active semiconductors. Thus, Ohmic loss dominatedmetamaterial absorbers can be converted into photovoltaic near-perfectabsorbers with the advantage of harvesting the full potential of lightmanagement offered by the metamaterial absorbers. Based on experimentalpermittivity data for indium gallium nitride, we have shown that between75%-95% absorbance can be achieved in the semiconductor layers of the convertedmetamaterial absorbers. Besides other metamaterial and plasmonic devices, ourresults may also apply to photodectors and other metal or semiconductor basedoptical devices where resistive losses and power consumption are importantpertaining to the device performance.

Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics