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RF sputtered ZnO and Al:ZnO films are attractive transparent conductiveoxides for fabrication of opto-electronic devices. In this paper we presentefforts to control carrier concentration and mobility of ZnO/Al:ZnO thin filmsby controlling deposition parameters (RF power, pressure and substratetemperature. Al:ZnO thin film with resistivity as low as $\rho$ = $3.8\times10^{-4}$ $\Omega$.cm at deposition temperature of 250{\deg}C has been achieved.Zinc oxide thin film with low resistivity of $\rho$ = $3.7\times 10^{-2}$$\Omega$.cm and high electron mobility of $30$ $\mathrm{cm^{-2}V^{-1}s^{-1}}$at deposition temperature of 250{\deg}C with acceptable electronic parametersstability has been obtained.Light transmission of Al:ZnO and ZnO samplesdeposited on glass at different substrate temperature has been studied.Investigation were made to assess the effect of deposition temperature on thephotoluminescence spectra (PL) of ZnO/Al:ZnO sputtered on silicon and glasssubstrate. The evolution of near band edge (NBE) and deep level emission (DLE)photoluminescence peaks with deposition temperature in ZnO/Al:ZnO sputtered onSilicon and glass substrate have been studied.

Systematic control of carrier concentration and resisitivity in RF sputtered Zinc oxide thin films