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We report low temperature scanning tunneling microscopy characterization ofMoSe2 crystals, and the fabrication and electrical characterization of MoSe2field-effect transistors on both SiO2 and parylene-C substrates. We find thatthe multilayer MoSe2 devices on parylene-C show a room temperature mobilityclose to the mobility of bulk MoSe2 (100 cm2V-1s-1 - 160 cm2V-1s-1), which issignificantly higher than that on SiO2 substrate (~50 cm2V-1s-1). The roomtemperature mobility on both types of substrates are nearly thicknessindependent. Our variable temperature transport measurements reveal ametal-insulator transition at a characteristic conductivity of e2/h. Themobility of MoSe2 devices extracted from the metallic region on both SiO2 andparylene-C increases up to ~ 500 cm2V-1s-1 as the temperature decreases to ~100 K, with the mobility of MoSe2 on SiO2 increasing more rapidly. In spite ofthe notable variation of charged impurities as indicated by the strongly sampledependent low temperature mobility, the mobility of all MoSe2 devices on SiO2converges above 200 K, indicating that the high temperature (> 200 K) mobilityin these devices is nearly independent of the charged impurities. Our atomicforce microscopy study of SiO2 and parylene-C substrates further rule out thesurface roughness scattering as a major cause of the substrate dependentmobility. We attribute the observed substrate dependence of MoSe2 mobilityprimarily to the surface polar optical phonon scattering originating from theSiO2 substrate, which is nearly absent in MoSe2 devices on parylene-Csubstrate.

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate