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Triethylsilylethynyl anthradithiophene (TESADT) holds considerable promisefor organic transistor applications due to the high electrical mobilitiesattained by post-deposition crystallization using solvent vapour annealing. Wehave studied thermal annealing as an alternative route to post-depositioncrystallization of TESADT films. Thermal annealing initially appears promising,producing mm-sized crystal domains, but poor electrical performance isobtained, which we attribute to a combination of crack formation andpotentially also structural transition during the anneal process. We also findthat illumination has a significant positive effect on crystallization,possibly due to an optically-induced enhancement in molecular mobility duringannealing. This suggests further studies of how solvent exposure, heat,substrate surface properties and particularly light exposure influence theordering kinetics of TESADT are warranted.

Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?