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In this paper, two dimensional modulation of the potential in sexithiophene(T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction fieldeffect transistors due to the specific microstructure at the interface is usedto explain the negative transconductance effect (NTC) experienced insexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2)heterojunction field effect transistors. The NTC effect has been experienced intunnel devices, such as the tunnel diode, the resonant tunneling field effecttransistors (RT-FETs), resonant tunneling double barrier devices. In grid-gatemodulation-doped field effect transistors, instead, a periodic potentialbarriers in the direction of the transport of charges was used to explain thenegative transconductance (NDR). Since in T6 / PDI-8CN2 heterojunction fieldeffect transistors the NTC effect is irrespective of the order of thesemiconductor layer and since the modulation of the transport properties isdeeply influenced by the island dimension of the semiconductor layer, we arguethat the origin of the NTC effect resides in the achievement of a specificmicrostructure of the heterostructure in the charge transport plane.

Microstructured tunable two dimensional potential modulation in organic heterostructure field effect transistors