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Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE)and laser induced etching (LIE)) have been studied by comparing the observedsurface morphologies using SEM. A uniformly distributed smaller (submicronsized) pores are formed when MIE technique is used because the pore formationis driven by uniformly distributed metal (silver in present case)nanoparticles, deposited prior to the porosification step. Whereas in p-Si,prepared by LIE technique, wider pores with some variation in pore size ascompared to MIE technique is observed because a laser having gaussian profileof intensity is used for porosification. Uniformly distribute well-aligned Sinanowires are observed in samples prepared by MIE method as seen usingcross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eVcorresponding to red emission at room temperature is observed which revealsthat the Si nanowires, present in p-Si prepared by MIE, show quantumconfinement effect. The single PL peak confirms the presence of uniform sizednanowires in MIE samples. These vertically aligned Si nanowires can be used forfield emission application.

Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)