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We investigate the structural damage of graphene underlying dielectrics (HfO2and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD).Dielectric film is grown on bilayer graphene without inducing significantdamage to the bottom graphene layer. Based on Raman spectra, we demonstratethat the bottom graphene layer has the salient features of single layergraphene. During the initial half-cycle PE-ALD, the upper graphene layer reactswith the metal precursor, forming uniform nucleation islands or an activemetallic carbide layer. After monolayer dielectric coverage, the bottomgraphene layer has additional protection. The upper graphene layer serves as asacrificial layer, which not only promotes the adhesion of dielectric ongraphene, but also protects the lattice symmetry of the bottom graphene layer.Our results indicate that bilayer graphene allows for controlling/limiting thedegree of defect during the ALD of dielectrics and could be a good startingmaterial for building filed effect transistors and sensing devices.

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition