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We have investigated both the temperature and the power dependence ofmicrowave losses for various dielectrics commonly used as substrates for thegrowth of High critical Temperature Superconductor thin films. We presentmeasurement of niobium superconducting $\lambda/2$ coplanar waveguideresonators, fabricated on $La_{0.3}Sr_{0.7}Al_{0.65}Ta_{0.35}O_3$ (LSAT), $MgO$(MgO) and $LaAlO_3$ (LAO), at the millikelvin temperature range and at lowinput power. By comparing our results with the Two-Level System (TLS) model, wehave discriminated among different dominant loss mechanisms. LSAT has shown thebest results as regards the dielectric losses in the investigated regimes.

Microwave dielectric losses at millikelvin temperatures of substrates suitable for High critical Temperature Superconductors epitaxial growth