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We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30)ferroelectric having large remanent polarization (15-30 {\mu}C/cm2), 0.3-0.4 Vopen circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9eV), large ON and OFF photo current ratio, and the fast decay time. Reasonablygood photo current density (1-5 {\mu}A/cm2) was obtained without gate biasvoltage which significantly increased with large bias field. Ferroelectricpolarization dictates the polarity of VOC and direction of short circuitcurrent (ISC), a step forward towards the realization of noncentrosymmetricferroelectric material sensitive to visible light.

Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films