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Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS)and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), andweak anti-localization (WAL) have been carried out on epitaxial Bi thin films($10-70$ bilayers) on Si(111). The results show that while the film interior isinsulating all six surfaces of the Bi thin films are robustly metallic. Wepropose that these properties are the manifestation of a novel phenomenon,namely, a topologically trivial bulk system can become topologicallynon-trivial when it is made into a thin film. We stress that what's observedhere is entirely different from the predicted 2D topological insulating statein a single bilayer Bi where only the four side surfaces should possesstopologically protected gapless states.

The emergence of topologically protected surface states in epitaxial Bi(111) thin films