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We consider Berry phase mediated Nernst effect in silicene. The low energyband structure of silicene consists of two valleys near the Dirac points,similar to graphene. The low energy transport properties of the quasiparticlescan be described as Berry phase dependent phenomena. By contrast to graphene,silicene has strong spin-orbit interaction leading to opening of the gap in theenergy spectrum and spin-splitting of the bands in each valley. If an electricfield is applied perpendicular to the silicene sheet, it allows tunability ofthe gap. \ We show that this results in Berry-phase-supported spin and valleypolarized Nernst effect when the system is subjected to a temperature gradient.The Nernst response can be used to create valley and spin polarization at thetransverse edges of silicene sheet. The applied electric field also allowscontrol of valley and spin polarization in silicene. The predicted valley andspin polarized Nernst effect in silicene is more general and applies to othertwo-dimensional (2D) buckled Dirac Fermion systems such as 2D germanium andtin.

Prediction of topological Nernst effect in silicene and similar 2D materials