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Broadband visible light emitting, three-dimensional hexagonal annularmicrostructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated viaselective-area epitaxial growth. The single hexagonal annular structure iscomposed of not only polar facet of (0001) on top surface but also semi-polarfacets of {10-11} and {11-22} in inner and outer sidewalls, exhibitingmulti-color visible light emission from InGaN/GaN MQWs formed on the differentfacets. The InGaN MQWs on (0001) facet emits the longer wavelength (greencolor) due to the larger well thickness and the higher In composition, whilethose on semi-polar facets of {10-11} and {11-22} had highly-efficient shorterwavelength (violet to blue color) emission caused by smaller well thickness andsmaller In composition. By combining the multiple color emission depending ondifferent facets, high efficiency broadband visible light emission could beachieved. The emission color can be changed with excitation power density owingto the built-in electric field on the (0001) facet, which is confirmed bytime-resolved luminescence experiments. The hexagonal annular structures can bea critical building block for highly efficient broadband visible light emittingsources, providing a solution to previous problems related to the fabricationissues for phosphor-free white light emitting devices.

Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures