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A combined experimental and computational study of the recrystallizationprocess induced by swift heavy ions in pre-damaged silicon carbide crystals wasreported in a recent paper by Debelle et al. [Phys. Rev. B 86, 100102(R)(2012)]. In this study, the authors tried to mimic by means of moleculardynamic simulations both damage production induced by low energy ionirradiation in SiC and the recrystallization effect generated by subsequentswift heavy ion irradiation. Here we show that the simulations performed by theauthors are far from being realistic and cannot reproduce, even qualitatively,the experimental results. In fact, in their simulation of damage production,amorphization is reached at an amount of deposited energy per target atom($\sim$5.4 eV/atom) which is nearly 5 times less than what is found in previousexperimental and computational studies, whereas for the simulation of therecrystallization process, the recrystallization rate per incident ion is about40 times higher than the experimental value. Because of these extremely hugediscrepancies, these molecular dynamic calculations are completely erroneousand the authors cannot claim that they found an "exceptionally good agreementbetween experiments and simulations" and that "the recovery process isunambiguously accounted for by the thermal spike phenomenon". In addition, nomention is given about a very similar experimental study recently published bysome of the authors but with a quite different result for the case of fullyamorphous SiC.

Comment on "Combined experimental and computational study of the  recrystallization process induced by electronic interactions of swift heavy  ions with silicon carbide crystals"