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Transport due to spin-helical massless Dirac fermion surface state is ofparamount importance to realize various new physical phenomena in topologicalinsulators, ranging from quantum anomalous Hall effect to Majorana fermions.However, one of the most important hallmarks of topological surface states, theDirac linear band dispersion, has been difficult to reveal directly intransport measurements. Here we report experiments on Bi2Te3 nanoribbonambipolar field effect devices on high-k SrTiO3 substrates, where we achieve agate-tuned bulk metal-insulator transition and the topological transport regimewith substantial surface state conduction. In this regime, we report twounambiguous transport evidences for gate-tunable Dirac fermions through {\pi}Berry$'$s phase in Shubnikov-de Haas oscillations and effective massproportional to the Fermi momentum, indicating linear energy-momentumdispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2coherent conduction channels (indicating 2 decoupled surfaces) near the chargeneutrality point, and a transition to weak localization (indicating a collapseof the Berry$'$s phase) when the Fermi energy approaches the bulk conductionband. The gate-tunable Dirac fermion topological surface states pave the waytowards a variety of topological electronic devices.

Gate Tunable Relativistic Mass and Berry$'$s phase in Topological Insulator Nanoribbon Field Effect Devices