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CaCu3Ti4O12 (CCTO) ceramics are potential candidates for capacitorapplications due to their large dielectric permittivity (e') values of up to300 000. The underlying mechanism for the high e' is an internal barrier layercapacitor (IBLC) structure of insulating grain boundaries (GB) and conductinggrain interiors (bulk). This behaviour is reviewed and discussed in detail. Theorigin of the IBLC structure is attributed to a small Cu non-stoichiometry innominally insulating CaCu3Ti4O12, which varies between the GBs and bulk. Suchnon-stoichiometry effects are studied in detail by analyzing bulk ceramics ofdifferent composition within the ternary CaO-CuO-TiO2 phase diagram using X-raydiffraction (XRD), scanning electron microscopy (SEM) and impedancespectroscopy (IS). At least two defect mechanisms are suggested to exist. It isfurther shown that the development of the defect mechanisms in CCTO and theconcomitant formation of the IBLC structure strongly depend on the processingconditions of CCTO ceramic pellets such as the sintering temperature. Nominallystoichiometric CCTO bulk ceramics sintered at different temperatures areanalyzed using XRD, SEM and IS. The performance of CCTO ceramics for IBLCapplications is controlled by subtle modifications in the compoundstoichiometry that is strongly dependent on the ceramic sintering temperature.

CaCu3Ti4O12 (CCTO) ceramics for capacitor applications