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We have carried out a detailed programme to explore the superconductingcharacteristics of reactive DC-magnetron sputtered NbN. The basic principle isto ignite a plasma using argon, and then to introduce a small additionalnitrogen flow to achieve the nitridation of a Nb target. Subsequent sputteringleads to the deposition of NbN onto the host substrate. The characteristics ofa sputtered film depend on a number of parameters: argon pressure, nitrogenflow rate and time-evolution profile, substrate material, etc. Crucially, thehysteresis in the target voltage as a function of the nitrogen flow can be usedto provide a highly effective monitor of nitrogen consumption during thereactive process. By studying these dependencies we have been able to achievehighly reproducible film characteristics on sapphire, silicon dioxide onsilicon, and silicon nitride on silicon. Intrinsic film stress was minimised byoptimising the argon pressure, giving NbN films having Tc = 14.65 K. In thepaper, we report characteristics such as deposition rate, Residual ResistanceRatio (RRR), film resistivity, transition temperature, and stress, as afunction of deposition conditions. In order to enhance our understanding of themicrowave properties of the films, we fabricated a wide range of microstrip NbNresonators (half wavelength, quarter wavelength, ring resonators). In thepaper, we provide an illustrative result from this work showing a 2.1097 GHzresonator having a Q of 15,962 at 3.3 K.

Development of a NbN Deposition Process for Superconducting Quantum Sensors