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Low temperature electron transport measurements of single electrontransistors fabricated in advanced CMOS technology with polysilicon gates notonly exhibit clear Coulomb blockade behavior but also show a large number ofadditional conductance fluctuations in the nonlinear regime. By comparison withsimulations these features are quantitatively attributed to the effects ofdiscretely charged islands in the polysilicon gates.

Discrete Charging in Polysilicon Gates of Single Electron Transistors