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We performed self-consistent modelling of electrotransport andelectromechanical response of solid electrolyte thin films allowing for stericeffects of mobile charged defects (ions, protons or vacancies), electrondegeneration and Vegard stresses. We establish correlations between thefeatures of the space-charge dynamics, current-voltage and bending-voltagecurves in the wide frequency range of applied electric voltage. The pronouncedferroelectric-like hysteresis of bending-voltage loops and current maxima ondouble hysteresis current-voltage loops appear for the electron-openelectrodes. The double hysteresis loop with pronounced humps indicates theresistance switching of memristor-type. The switching occurs due to the strongcoupling between electronic and ionic subsystem. The sharp meta-stable maximumof the electron density appears near one open electrode and moves to anotherone during the periodic change of applied voltage. Our results can explain thenature and correlation of electrical and mechanical memory effects in thinfilms of solid electrolytes. The analytical expression proving that theelectrically induced bending of solid electrolyte films can be detected byinterferometric methods is derived.

Space charge dynamics in solid electrolytes with steric effect and  Vegard stresses: resistive switching and ferroelectric-like hysteresis of  electromechanical response