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Mostly optical spectroscopies are used to investigate existence of excitons,Mott transitions and other exquisite excitonic condensed phases of matter. Onthe other hand, electrical signatures of excitons are hardly explored. Here weexamine steady state, small signal, electrical response of AlGaInP basedmulti-quantum well laser diodes to identify and investigate the presence ofexcitons in electroluminescence. This frequency dependent response shows biasactivated capacitance following a phenomenological rate equation. Dynamicdependence of this response on frequency reverses after light emission. Thisresults in negative activation energy which we explain with the formation of astable, intermediate transition state whose average energy matches well withexcitonic binding energy of these III-V semiconductors. Hence we identify thepresence of excitons which are also responsible for observedelectroluminescence at low charge injections by electrical measurements alone.Further increase in charge injection suppresses the electrical signature ofexcitons representing their Mott transition into electron-hole plasma which issupported by standard optical measurements. This kind of correlation betweenelectrical and optical properties of excitons was not systematicallyinvestigated in the past. Therefore, this study demonstrates a freshexperimental approach to electrically probe the rich and complex physics ofexcitons.

Electrical Signature of Excitonic Electroluminescence and Mott Transition at Room Temperature