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Taken together and viewed holistically, recent theory, low temperature (T)transport, photoelectron spectroscopy and quantum oscillation experiments havebuilt a very strong case that the paradigmatic mixed valence insulator SmB6 iscurrently unique as a three-dimensional strongly correlated topologicalinsulator (TI). As such, its many-body T-dependent bulk gap brings an extrarichness to the physics beyond that of the weakly correlated TI materials. Howwill the robust, symmetry-protected TI surface states evolve as the gap closeswith increasing T? For SmB6 exploiting this opportunity first requiresresolution of other important gap-related issues, its origin, its magnitude,its T-dependence and its role in bulk transport. In this paper we reportdetailed T-dependent angle resolved photoemission spectroscopy (ARPES)measurements that answer all these questions in a unified way.

Temperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6