English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, howeverthere is still a disagreement on the source of its magnetism. The divergencesarise from the results indicating that the holes mediated ferromagnetism residein the valence band or the impurity band. Full understanding of character ofthe Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. Inthis paper we verify the ellipsometric results and compare with more precisephotoreflectance method which gives a new insight into the interactions of Mnimpurity states with GaAs valence band. Indeed, $E_{1}$ and$E_{1}$+${\Delta}_{1}$ inter-band transition energies for highly doped andannealed (Ga,Mn)As epitaxial layers have not confirmed the interaction betweendetached Mn impurity band and the valence band. Thus, the description withmerged Mn states and GaAs valence band is in agreement with our results. Ourfindings are supported by the high resolution transmission microscopy andmagnetization measurements.

Analysis of the $E_{1}$ and $E_{1}$ +${\Delta}_{1}$ optical transitions in (Ga,Mn)As epitaxial layers