English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report on the study of the electronic properties in PDI8-CN2 / Au,PDI8-CN2 / Si, PDI8-CN2 - T6 interfaces investigated by X-Ray (XPS) andUltraviolet (UPS) Photoemission Spectroscopy. In order to verify theconsistency with the results on field effect devices, heated substrates havebeen considered, while only in the case of PDI8-CN2 / Au interface alsosputter-cleaned Au has been used as a reference. We found a small interfacedipole between PDI8-CN2 and sputter-cleaned Au, which reverses its sign as aconsequence of the 'pillow effect' due to the presence of the contaminationlayer in the heated substrates. This result is in agreement with the transportmeasurements on PDI8-CN2 field effect transistors, which show an 'always on'behavior. We also found evidences of the formation of a built-in potential inT6 / PDI8-CN2 and PDI8-CN2 / T6 interfaces, mainly from the T6 side. This alsowell agrees with previous results on T6 / PDI8-CN2 heterostructures devices,exhibiting transport properties explainable with the presence of anaccumulation heterojunction at the interface.

Photoemission study of PDI8-CN2 /Au, PDI8-CN2 / Si and PDI8-CN2 - T6 interfaces