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Many promising building blocks of future electronic technology - includingnon-stoichiometric compounds, strongly correlated oxides, and strained orpatterned films - are inhomogeneous on the nanometer length scale. Exploitingthe inhomogeneity of such materials to design next-generation nanodevicesrequires a band structure probe with nanoscale spatial resolution. To addressthis demand, we report the first simultaneous observation and quantitativereconciliation of two candidate probes - Landau level spectroscopy andquasiparticle interference imaging - which we employ here to reconstruct themulti-component surface state band structure of the topological semimetalantimony(Sb). We thus establish the technique of band structure tunnelingmicroscopy (BSTM), whose unique advantages include nanoscale access tonon-rigid band structure deformation, empty state dispersion, and magneticfield dependent states. We use BSTM to elucidate the relationship between bulkconductivity and surface state robustness in topological materials, and toquantify essential metrics for spintronics applications.

Imaging the Nanoscale Band Structure of Topological Sb