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The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit. The ferromagnetic transformation intophase-separated (two phase) state was displayed below Tc~127 and has observedthat the lattice change discontinuously in the doped cobalt perovskitesLa0.4Gd0.1Sr0.5CoO3. The Ginzburg-Landau phase field is introduced to deduceantiferroelectric domain structure in LGSCO thin film. On the basis of thedomain structures, the phase boundary of thin film is strongly dependent on thecombination of electric-mechanical coupling. The phase transformation intophase separated state occurs below Tc~127-128K, and have displayed that thelattice constants change discontinuously at the transformation. The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T is 6.05% for approximately 140K.

Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction