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Inherent low frequency noise is a ubiquitous phenomenon, which limitsoperation and performance of electronic devices and circuits. This limitingfactor is very important for nanoscale electronic devices, such as 2Dsemiconductor devices. In this work, low frequency noise in high mobilitysingle crystal MoS2 grown by chemical vapor deposition (CVD) is investigated.The measured low frequency noise follows an empirical formulation of mobilityfluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Smallvariation of Hooge's parameter suggests superior material uniformity andprocessing control of CVD grown MoS2 devices than reported single-layer MoS2FET. The extracted Hooge's parameter is one order of magnitude lower than CVDgrown graphene. The Hooge's parameter shows an inverse relationship with thefield mobility.

Low frequency noise in chemical vapor deposited MoS2